DMN10H220L

Characteristic

Symbol

Value

Units

Drain-Source Voltage

100

V

Gate-Source Voltage

±16

V

(Note 6)

1.6

1.3

A

(Note 5)

1.4

1.1

A

Maximum Continuous Body Diode Forward Current (Note 6)

0.6

A

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

8

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

1.3

W

0.8

Thermal Resistance, Junction to Ambient

(Note 6)

94

°C/W

(Note 5)

177

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

100

—

—

V

μA

Zero Gate Voltage Drain Current

—

—

1

μA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1

—

2.5

V

μA

Static Drain-Source On-Resistance

—

—

220

mΩ

—

250

Diode Forward Voltage

—

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

401

—

pF

f = 1MHz

Output Capacitance

—

22

—

Reverse Transfer Capacitance

—

17

—

Gate Resistnace

—

2.1

—

Ω

—

4.1

—

nC

—

8.3

—

Gate-Source Charge

—

1.5

—

Gate-Drain Charge

—

2

—

Turn-On Delay Time

—

6.8

—

ns

Turn-On Rise Time

—

8.2

—

Turn-Off Delay Time

—

7.9

—

Turn-Off Fall Time

—

3.6

—

Reverse Recovery Time

—

17

—

ns

μs

Reverse Recovery Charge

—

9.8

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN10H220L

Document number: DS36720 Rev. 3 - 2

2 of 6

www.diodes.com

July 2014

© Diodes Incorporated