25.04.2012

LED430-66-60

1 of 2

LED430-66-60

TECHNICAL DATA

High Power LED Array, 60 chips

InGaN

LED430-66-60 is a wide viewing and extremely high output power illuminator assembled with a

total of 60 high efficiency InGaN diode chips, mounted on a metal stem TO-66 with AIN ceramics

and covered with double coated clear silicone and epoxy resin.

These devices are designed for high current operation with proper heat sinking to improver thermal

conductive efficiency.

Specifications

(Unit: mm)

•

Structure:

InGaN, 60 LED chips

•

Peak Wavelength:

430 nm

•

Optical Output Power:

550 mW

•

Package:

TO-66 stem with AIN

•

Lens:

clear silicone and epoxy resin

Item

Symbol

Value

Unit

Power Dissipation

12.0

W

Forward Current

600

mA

Reverse Voltage

30

V

Operating Temperature

-30 … +80

°C

Storage Temperature

-30 … +110

°C

Soldering Temperature *

240

°C

* must be completed within 3 seconds at 260°C

Electro-Optical Characteristics

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

Peak Wavelength

λ

P

-

430

-

nm

Half Width

Δλ

-

15

-

nm

Total Radiated Power

-

550

-

mW

Radiant Intensity

-

-

-

mW/sr

Brightness

-

-

-

cd

Forward Voltage

-

19.0

-

V

Reverse Voltage

30

-

-

V

Viewing Half Angle

Θ

1/2

-

±60

-

deg.

Total Radiated Power measured by S3584-08.

Heat Sink is required

, to keep the LED at ≤60 °C.

Note: The above specifications are for reference purpose only and subjected to change without prior notice.