DMG6602SVTQ

Document number: DS37643 Rev. 1 - 2

3 of 10

www.diodes.com

December 2014

© Diodes Incorporated

DMG6602SVTQ

Electrical Characteristics

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

1.0

µA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

1.0

-

2.3

V

Static Drain-Source On-Resistance

-

38

55

60

100

m

Ω

Forward Transfer Admittance

-

4

-

S

Diode Forward Voltage

-

0.8

1

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

-

290

400

pF

f = 1.2MHz

Output Capacitance

-

40

80

Reverse Transfer Capacitance

-

40

80

Gate Resistance

-

1.4

-

Ω

-

4

6

nC

-

9

13

Gate-Source Charge

-

1.2

-

Gate-Drain Charge

-

1.5

-

Turn-On Delay Time

-

3

-

ns

Turn-On Rise Time

-

5

-

Turn-Off Delay Time

-

13

-

Turn-Off Fall Time

-

3

-

Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

V

, DRAIN -SOURCE VOLTAGE(V)

Fig. 1 Typical Output Characteristics

DS

0.0

2.0

4.0

6.0

8.0

10.0

V

, GATE SOURCE VOLTAGE(V)

Fig. 2 Typical Transfer Characteristics

GS

0

2

4

6

8

10

0

1

2

3

4

5

V

= 5.0V

DS