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DMC1229UFDB Datasheet(PDF) 3 Page - Diodes Incorporated |
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DMC1229UFDB Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 9 page  DMC1229UFDB Document number: DS36128 Rev. 4 - 2 3 of 9 www.diodes.com September 2013 © Diodes Incorporated DMC1229UFDB Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 12 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 μA VDS = 12V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 0.4 — 1 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) — 17 29 mΩ VGS = 4.5V, ID = 5A — 20 34 VGS = 2.5V, ID = 4.6A — 24 44 VGS = 1.8V, ID = 4.1A — 30 65 VGS = 1.5V, ID = 2A Forward Transfer Admittance |Yfs| — 6.5 — S VDS = 10V, ID = 5A Diode Forward Voltage VSD — 0.6 1.2 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 914 — pF VDS = 6V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 132 — pF Reverse Transfer Capacitance Crss — 119 — pF Gate Resistance Rg — 1.26 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 10.5 — nC VDS = 6V, ID = 6.5A Total Gate Charge (VGS = 8V) — 19.6 — nC Gate-Source Charge Qgs — 1.2 — nC Gate-Drain Charge Qgd — 1.6 — nC Turn-On Delay Time tD(on) — 5.0 — ns VDD = 6V, VGS = 4.5V, RL = 1.2Ω, RG = 1Ω Turn-On Rise Time tr — 10.5 — ns Turn-Off Delay Time tD(off) — 16.6 — ns Turn-Off Fall Time tf — 4.1 — ns Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -12 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1.0 μA VDS = -12V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -0.4 — -1 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) — 37 61 mΩ VGS = -4.5V, ID = -3.6A — 47 81 VGS = -2.5V, ID = -3.2A — 63 115 VGS = -1.8V, ID = -1A — 90 170 VGS = -1.5V, ID = -1A Forward Transfer Admittance |Yfs| — 5.5 — S VDS = -10V, ID = -3.6A Diode Forward Voltage VSD — -0.65 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 915 — pF VDS = -6V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 225 — pF Reverse Transfer Capacitance Crss — 183 — pF Gate Resistance Rg — 56.9 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 10.7 — nC VDS = -6V, ID = -4.3A Total Gate Charge (VGS = -8V) — 17.9 — nC Gate-Source Charge Qgs — 1.7 — nC Gate-Drain Charge Qgd — 3.0 — nC Turn-On Delay Time tD(on) — 5.7 — ns VDD = -6V, VGS = -4.5V, RL = 1.6Ω, RG = 1Ω Turn-On Rise Time tr — 11.5 — ns Turn-Off Delay Time tD(off) — 27.8 — ns Turn-Off Fall Time tf — 26.4 — ns Notes: 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. |
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