STUD339S datasheet(2/8 Pages) SAMHOP

Part #	STUD339S

Description	Super high dense cell design for low RDS(ON).

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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Symbol

Min

Typ

Max

Units

BVDSS

30

V

1

IGSS

±100

nA

VGS(th)

V

8.2

gFS

S

CISS

900

pF

COSS

161

pF

CRSS

124

pF

Qg

17

nC

18

46

tD(ON)

14

ns

tr

ns

tD(OFF)

ns

tf

ns

VDS=15V,VGS=0V

SWITCHING CHARACTERISTICS

VDD=15V

ID=1A

VGS=10V

RGEN=6ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=20A

VDS=10V , ID=20A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

IDSS

uA

Gate Threshold Voltage

VDS=VGS ,ID=250uA

VDS=24V , VGS=0V

VGS=±20V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

VGS=4.5V , ID=16A

9.6

11.5

15

m ohm

b

f=1.0MHz

b

STU/D339S

Ver 1.0

www.samhop.com.tw

Aug,17,2012

2

VSD

nC

Qgs

nC

Qgd

1.8

4.1

Gate-Drain Charge

Gate-Source Charge

Diode Forward Voltage

VDS=15V,ID=20A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=2A

0.77

1.3

V

Notes

nC

6.5

VDS=15V,ID=20A,VGS=10V

VDS=15V,ID=20A,VGS=4.5V

a.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

b.Guaranteed by design, not subject to production testing.

c.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)

_

1.0

1.7

3

55

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