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STUD10L01 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STUD10L01 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page S mHop Microelectronics C orp. a STU/D10L01 Symbol VDS VGS IDM A ID Units Parameter 100 V V ±20 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 100V 10A 213 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. N-Channel Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A Ver 1.1 www.samhop.com.tw Dec,19,2011 1 Details are subject to change without notice. TC=25°C G G S S D D G G S S STU SERIES TO - 252AA( D- PAK ) STD SERIES TO - 251( I - PAK ) W PD °C -55 to 150 TC=25°C THERMAL CHARACTERISTICS Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 50 °C/W Thermal Resistance, Junction-to-Ambient R JA 2.5 °C/W Thermal Resistance, Junction-to-Case R JC TC=70°C A EAS mJ Single Pulse Avalanche Energy d TC=70°C W a a a a 11 10 29 50 Gre rr P Pr P P o rr 8 32 |
Similar Part No. - STUD10L01 |
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Similar Description - STUD10L01 |
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