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STT622S Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STT622S
Description  Super high dense cell design for low RDS(ON).
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STT622S Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
60
V
1
IGSS
±100
nA
VGS(th)
V
61
gFS
S
CISS
720
pF
COSS
52
pF
CRSS
39
pF
Qg
12.5
nC
12
20
14.5
tD(ON)
12
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=4.2A
VDS=5V , ID=4.2A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=48V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
VGS=4.5V , ID=3.7A
76
74
100
m ohm
c
f=1.0MHz
c
STT622S
Ver 1.0
www.samhop.com.tw
Jul,30,2010
2
nC
Qgs
nC
Qgd
1.5
3.2
Gate-Drain Charge
Gate-Source Charge
VDS=30V,ID=4.2A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
nC
6
VDS=30V,ID=4.2A,VGS=10V
VDS=30V,ID=4.2A,VGS=4.5V
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.79
1.2
V
Notes
b
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
_
_
_
1
1.9
3
10.5


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