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CZT7090LE_15 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part No. CZT7090LE_15
Description  SILICON POWER TRANSISTOR
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Maker  CENTRAL [Central Semiconductor Corp]
Homepage  http://www.centralsemi.com
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CZT7090LE
ENHANCED SPECIFICATION
SURFACE MOUNT
LOW VCE(SAT) PNP
SILICON POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT7090LE is an
Enhanced Specification Low VCE(SAT) PNP Silicon
Power Transistor packaged in an industry standard
SOT-223 case. High Collector Current, coupled with a
Low Saturation Voltage, make this an excellent choice
for industrial and consumer applications where electrical
and thermal operational efficiency are top priorities.
MARKING: FULL PART NUMBER
SOT-223 CASE
SOT-223 CASE
APPLICATIONS:
• Power Management / DC-DC Converters
• Portable and Battery Powered Products
• LAN Equipment / Motor Controllers
FEATURES:
• Low VCE(SAT) PNP Transistor
• High Current (IC=3.0A MAX)
• VCE(SAT)=0.132V TYP @ IC=2.0A
• SOT-223 Surface Mount Package
• Complementary NPN device: CZT3090LE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
3.0
A
Peak Collector Current
ICM
5.0
A
Power Dissipation
PD
2.0
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
62.5
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=50V
50
nA
ICBO
VCB=50V, TA=100°C
10
µA
IEBO
VEB=5.0V
50
nA
BVCBO
IC=100μA
60
V
BVCEO
IC=10mA
50
V
BVEBO
IE=100μA
6.0
V
VCE(SAT)
IC=500mA, IB=5.0mA
76
175
mV
VCE(SAT)
IC=1.0A, IB=10mA
124
250
mV
VCE(SAT)
IC=2.0A, IB=50mA
132
300
mV
VBE(SAT)
IC=2.0A, IB=100mA
0.888
1.0
V
hFE
VCE=2.0V, IC=10mA
300
363
800
hFE
VCE=2.0V, IC=500mA
250
314
hFE
VCE=2.0V, IC=1.0A
250
281
hFE
VCE=2.0V, IC=2.0A
150
228
hFE
VCE=2.0V, IC=3.0A
100
177
Cob
VCB=10V, IE=0, f=1.0MHz
35
pF
fT
VCE=5.0V, IC=50mA, f=50MHz
100
MHz
♦ Enhanced specification
R1 (1-March 2010)
www.centra lsemi.com




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