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CMUT3410 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part # CMUT3410
Description  SURFACE MOUNT COMPLEMENTARY LOW SILICON TRANSISTORS
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CMUT3410 Datasheet(HTML) 1 Page - Central Semiconductor Corp

  CMUT3410_15 Datasheet HTML 1Page - Central Semiconductor Corp CMUT3410_15 Datasheet HTML 2Page - Central Semiconductor Corp  
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CMUT3410 NPN
CMUT7410 PNP
SURFACE MOUNT
COMPLEMENTARY LOW VCE(SAT)
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUT3410, and
CMUT7410, are low VCE(SAT) silicon transistors in
an ULTRAmini™ surface mount package designed for
small signal general purpose amplifier and switching
applications, requiring low collector emitter saturation
voltage.
MARKING CODES: CMUT3410: C43
CMUT7410: C47
SOT-523 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
1.0
A
Peak Collector Current
ICM
1.5
A
Power Dissipation
PD
250
mW
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
500
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
TYP
MAX
UNITS
ICBO
VCB=40V
100
nA
IEBO
VEB=6.0V
100
nA
BVCBO
IC=100µA
40
V
BVCEO
IC=10mA
25
V
BVEBO
IE=100µA
6.0
V
VCE(SAT)
IC=50mA, IB=5.0mA
25
30
50
mV
VCE(SAT)
IC=100mA, IB=10mA
40
50
75
mV
VCE(SAT)
IC=200mA, IB=20mA
80
95
150
mV
VCE(SAT)
IC=500mA, IB=50mA
190
205
250
mV
VCE(SAT)
IC=800mA, IB=80mA
290
320
400
mV
VCE(SAT)
IC=1.0A, IB=100mA
360
400
450
mV
VBE(SAT)
IC=800mA, IB=80mA
1.1
V
VBE(ON)
VCE=1.0V, IC=10mA
0.9
V
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
300
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
125
75
fT
VCE=10V, IC=50mA, f=100MHz
100
MHz
Cob
VCB=10V, IE=0, f=1.0MHz (CMUT3410)
6.0
10
pF
Cob
VCB=10V, IE=0, f=1.0MHz (CMUT7410)
10
15
pF
R2 (1-August 2011)
www.centra lsemi.com


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