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H2A1-H760 Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH

Part No. H2A1-H760
Description  IR High Power single chip LED
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Maker  ROITHNER [Roithner LaserTechnik GmbH]
Homepage  http://www.roithner-laser.com
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H2A1-H760 Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH

   
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13.08.2012
H2A1-H760
1 / 4
H2A1-H760
IR High Power single chip LED
H2A1-H760 is a GaAlAs based, high power 760 nm single chip LED in standard hexagonal Aluminum package for
general application. Slots in the Aluminum-core PCB allow for easy mounting of standard collimating optics and are
also suitable for M3 or M4 mounting screws. Large electrical interconnection pads on the PCB allow for convenient
installation.
Specifications
Structure: GaAlAs
Peak Wavelength: 760 nm
Optical Output Power: typ. 70 mW
Life Time: > 10.000 hours
Housing: standard emitter package
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Value
Unit
Power Dissipation, DC
PD
1000
mW
Forward Current, DC
IF
500
mA
Pulsed Current (1% duty cycle, 1kHz)
IFP
1000
mA
Reverse Voltage
UR
-5
V
Operating Temperature
Topr
-30 … +70
°C
Storage Temperature
Tstg
-30 … +85
°C
Soldering Temperature (max. 1,5 s)
Tsol
330
°C
Electro-Optical Characteristics (Ta=25°C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Forward Current
IF
-
350
-
mA
Viewing Angle
φ
IF = 350 mA
±
75
deg.
CW Output Power
PO
IF = 350 mA
70
mW
Peak Wavelength
λ
P
IF = 350 mA
753
760
767
nm
Forward Voltage
UF
IF = 350 mA
-
1.8
-
V
Half Width (FWHM)
Δλ
IF = 350 mA
-
28
nm
Switching time
TR, tF
IF = 350 mA
40
ns
Wavelength measurements tolerance is +/- 2%
Output power measurement tolerance is +/- 10%
Voltage measurement tolerance is +/- 2%
Device Materials
Item
Material
Foundation
Plastic
Lens
Acryl
Electrodes
AgCu
PCB
Al


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