Electronic Components Datasheet Search |
|
STS6N20 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
|
STS6N20 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page S mHop Microelectronics C orp. a STS6N20 Symbol VDS VGS IDM A ID Units Parameter 60 V V ±20 Gate-Source Voltage Drain-Source Voltage PRODUCT SUMMARY VDSS ID RDS(ON) ( Ω)Max 60V 0.8A 1.30 @ VGS=4.5V 1.05 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Surface Mount Package. N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A www.samhop.com.tw Jun,26,2012 1 Details are subject to change without notice. TA=25°C W PD °C -55 to 150 TA=25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG TA=70°C A TA=70°C W a a 0.8 3 1.25 Gr P Pr P P 0.64 0.8 100 °C/W THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R JA a Ver 1.0 S G D SOT 23 G S D |
Similar Part No. - STS6N20 |
|
Similar Description - STS6N20 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |