MMBT2222AWT1 datasheet(1/2 Pages) LRC

Part #	MMBT2222AWT1

Description	Preliminary Information General Purpose Transistors

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

K1–1/2

Preliminary Information

General Purpose Transistors

NPN Silicon

These transistors are designed for general

purpose amplifier applications. They are

housed in the SOT–323/SC–70 package which

is designed for low power surface mount

applications.

2

EMITTER

3

COLLECTOR

1

BASE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V

CEO

40

Vdc

Collector–Base Voltage

V

CBO

75

Vdc

Emitter–Base Voltage

V

EBO

6.0

Vdc

Collector Current — Continuous

I

C

600

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board,

P

D

150

mW

T

A = 25°C

Thermal Resistance Junction to Ambient

Rθ

JA

833

°C/W

Junction and Storage Temperature

T

J , Tstg

–55 to +150

°C

DEVICE MARKING

MMBT2222AWT1 = 1P

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (1)

V

(BR)CEO

40

—

Vdc

(I

C = 1.0 mAdc, I B = 0)

Collector–Base Breakdown Voltage

V

(BR)CBO

75

—

Vdc

(I

C = 10 µAdc, I E = 0)

Emitter–Base Breakdown Voltage

V

(BR)EBO

6.0

—

Vdc

(I

E = 10 µAdc, I C = 0)

Base Cutoff Current

I

BL

—

20

nAdc

(V

CE = 60 Vdc, V EB = 3.0 Vdc)

Collector Cutoff Current

I

CEX

—

10

nAdc

(V

CE

= 60 Vdc, V

EB

= 3.0 Vdc)

1. Pulse Test: Pulse Width<300

µs, Duty Cycle<2.0%.

1

3

2

CASE 419–02, STYLE 3

SOT–323 /SC – 70

MMBT2222AWT1

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