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FZT953_15 Datasheet(PDF) 2 Page - Diodes Incorporated

Part No. FZT953_15
Description  100V PNP MEDIUM POWER TRANSISTOR IN SOT223
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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FZT953
Datasheet Number: DS35942 Rev. 4 - 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
FZT953
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-140
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current
IC
-5
A
Peak Pulse Current
ICM
-10
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear derating factor
(Note 6)
PD
3.0
24
W
mW /°C
(Note 7)
1.6
12.8
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
42
°C/W
(Note 7)
RθJA
78
Thermal Resistance Junction to Lead
(Note 8)
RθJL
8.84
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 9)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
≥ 8,000
V
3B
Electrostatic Discharge - Machine Model
ESD MM
≥ 400
V
C
Notes:
6. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note 6, except the device is surface mounted on 25mm x 25mm with 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.




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