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FZT1151A Datasheet(PDF) 1 Page - Diodes Incorporated |
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FZT1151A Datasheet(HTML) 1 Page - Diodes Incorporated |
1 / 4 page PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES *V CEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low saturation Voltage * High Gain ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -45 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -5 A Continuous Collector Current IC -3 A Base Current IB -500 mA Power Dissipation at Tamb=25°C † Ptot 2.5 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C † The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches x 2 inches FZT1151A C C C E B SOT223 |
Similar Part No. - FZT1151A_15 |
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Similar Description - FZT1151A_15 |
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