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FZT958_15 Datasheet(PDF) 4 Page - Diodes Incorporated

Part No. FZT958_15
Description  400V PNP MEDIUM POWER TRANSISTOR IN SOT223
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Maker  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
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FZT958
Datasheet Number: DS36166 Rev. 5 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
FZT958
A Product Line of
Diodes Incorporated
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ.
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-400
-600
-
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 9)
BVCER
-400
-600
-
V
IC = -1µA, RB 1kΩ
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-400
-550
-
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-7
-8
-
V
IE = -100µA
Collector Cut-Off Current
ICBO
-
-
<1
-
-50
-1
nA
µ
A
VCB = -300V
VCB = -300V, TA = +100°C
Collector Cut-Off Current
ICER
R
1kΩ
-
-
<1
-
-50
-1
nA
µA
VCB = -300V
VCB = -300V, TA = +100°C
Emitter Cut-Off Current
IEBO
-
<1
-10
nA
VEB = -6V
DC Current Transfer Static Ratio (Note 9)
hFE
100
200
-
-
IC = -10mA, VCE = -10V
100
200
300
IC = -0.5A, VCE = -10V
10
20
-
IC = -1A, VCE = -10V
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
-
-100
-150
mV
IC = -10mA, IB = -1mA
-
-150
-200
IC = -100mA, IB = -10mA
-
-340
-400
IC = -500mA, IB = -100mA
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)
-
-830
-950
mV
IC = -0.5A, IB = -100mA
Base-Emitter Turn-On Voltage (Note 9)
VBE(on)
-
-725
-840
mV
IC = -0.5A, VCE = -10V
Transitional Frequency (Note 9)
fT
-
85
-
MHz
IC = -100mA, VCE = -10V,
f = 50MHz
Output Capacitance
Cobo
-
19
-
pF
VCB = -20V, f = 1MHz
Switching Time
tON
-
104
-
ns
VCC = -100V, IC = -500mA,
IB1 = -IB2 = -50mA
tOFF
-
2,400
-
Note:
9. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.




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