STM4470 datasheet(3/7 Pages) SAMHOP

Part #	STM4470

Description	Super high dense cell design for low RDS(ON).

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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STM4470

Parameter

Symbol

Condition

Min Typ Max Unit

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)

C

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage

VSD

VGS = 0V, Is =1.7A

0.73

1.2

V

b

Notes

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

VGS, Gate-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

20

15

10

5

0

0.5

1

1.5

2

2.5

3

25 C

20

16

12

8

4

0

125 C

0.6

3.6

3.0

2.4

1.8

1.2

VGS=2.5V

VGS=4.5V

VGS=3V

VGS=8V

Figure 4. On-Resistance Variation with

Drain Current and Temperature

1.75

1.60

1.45

1.30

1.15

1.0

0

25

50

125

Tj( C)

100

75

VGS=10VID=10A

Tj, Junction Temperature ( C)

VGS=4.5VID=6A

ID, Drain Current (A)

16

15

12

9

6

3

1

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

10

15

20

25

30

1

VGS=10V

VGS=4.5V

150

25

30

5

VGS=10V

c.Guaranteed by design, not subject to production testing.

d.Guaranteed when external R g=3.3 ohm and tf < tf max

b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.

a.S urface Mounted on FR 4 Board, t 10sec.

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