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STM105N Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part No. STM105N
Description  Super high dense cell design for low RDS(ON).
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM105N Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

  STM105N Datasheet HTML 1Page - SamHop Microelectronics Corp. STM105N Datasheet HTML 2Page - SamHop Microelectronics Corp. STM105N Datasheet HTML 3Page - SamHop Microelectronics Corp. STM105N Datasheet HTML 4Page - SamHop Microelectronics Corp. STM105N Datasheet HTML 5Page - SamHop Microelectronics Corp. STM105N Datasheet HTML 6Page - SamHop Microelectronics Corp. STM105N Datasheet HTML 7Page - SamHop Microelectronics Corp. STM105N Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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background image
Symbol
Min
Typ
Max
Units
BVDSS
100
V
1
IGSS
±100
nA
VGS(th)
V
25
gFS
S
CISS
3810
pF
COSS
215
pF
CRSS
158
pF
Qg
55
nC
69
76
47
tD(ON)
45
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=3A
VDS=10V , ID=3A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=10mA
Reverse Transfer Capacitance
ON CHARACTERISTICS
31
c
f=1.0MHz
c
STM105N
www.samhop.com.tw
Jul,30,2013
2
VSD
nC
Qgs
nC
Qgd
7
14.3
Gate-Drain Charge
Gate-Source Charge
Diode Forward Voltage
VDS=50V,ID=3A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=5A
0.76
1.3
V
Notes
VDS=50V,ID=3A,VGS=10V
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
e.Drain current limited by maximum junction temperature.
_
_
_
2
2.6
4
12
Ver 1.0


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