FZT688B_15 datasheet(2/2 Pages) DIODES

Part #	FZT688B

Description	SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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SOT223 NPN SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FEATURES

* Extremely low equivalent on resistance; RCE(sat) 83mΩ at 3A

* Gain of 400 at IC=3 Amps and very low saturation voltage

APPLICATIONS

* Flash gun convertors & Battery powered circuits

PARTMARKING DETAIL

FZT688B

COMPLEMENTARY TYPE -

FZT788B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

12

V

Collector-Emitter Voltage

VCEO

12

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

10

A

Continuous Collector Current

IC

4A

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Breakdown Voltages

V(BR)CBO 12

V

IC=100µA

V(BR)CEO 12

V

IC=10mA*

V(BR)EBO 5V

IE=100µA

Collector Cut-Off Current

ICBO

0.1

µ

A

VCB=10V

Emitter Cut-Off Current

IEBO

0.1

µ

A

VEB=4V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.04

0.06

0.18

0.35

0.40

V

IC=0.1A, IB=1mA

IC=0.1A,IB=0.5mA*

IC=1A, IB=50mA*

IC=3A, IB=20mA*

IC=4A, IB=50mA*

Base-Emitter SaturationVoltage

VBE(sat)

1.1

V

IC=3A, IB=20mA*

Base-Emitter Turn-On Voltage

VBE(on)

1.0

V

IC=3A, VCE=2V

Static Forward Current Transfer

Ratio

hFE

500

400

100

IC=0.1A, VCE=2V*

IC=3A, VCE=2V*

IC=10A, VCE=2V*

Transition Frequency

fT

150

MHz IC=50mA,VCE=5V

f=50MHz

Input Capacitance

Cibo

200

pF

VEB=0.5Vf=1MHz

Output Capacitance

Cobo

40

pF

VCB=10V,f=1MHz

Switching Times

ton

toff

40

500

ns

IC=500mA, IB1=50A

IB2=50mA, VCC=10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

FZT688B

C

E

B

3 - 218

3 - 217

-55°C

+25°C

+100°C

+175°C

+100°C

+25°C

-55°C

0.01

0.1

1

10

0.4

0.2

0

0.8

0.6

0.01

0.1

1

10

0.4

0.2

0

0.8

0.6

0.01

0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

0.01

0.1

1

10

1.0

0.8

0.6

0.4

0

0.2

1.6

1.4

1.2

TYPICAL CHARACTERISTICS

VCE(sat) v IC

I+ -

Collector Current (Amps)

VCE(sat) v IC

I+ -

Collector Current (Amps)

I+ -

Collector Current (Amps)

I+ -

Collector Current (Amps)

hFE v IC

VBE(sat) v IC

I+ -

Collector Current (Amps)

VBE(on) v IC

VCE=2V

1.5K

1K

500

-55°C

+25°C

+100°C

+175°C

IC/IB=100

Tamb=25°C

IC/IB=10

IC/IB=200

IC/IB=100

-55°C

+25°C

+100°C

+175°C

0

+

1

0.1

Safe Operating Area

VCE - Collector Emitter Voltage (V)

10V

100V

1s

DC

100ms

10ms

100µs

1ms

1V

0.01

0.1V

10

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