CMPD7000E

ENHANCED SPECIFICATION

SURFACE MOUNT

DUAL, IN SERIES

SILICON SWITCHING DIODES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD7000E is

an Enhanced version of the CMPD7000 Dual, Series

Configuration, Ultra-High Speed Switching Diode. This

device is manufactured by the epitaxial planar process,

in an epoxy molded surface mount SOT-23 package,

designed for high speed switching applications.

MARKING CODE: C5CE

FEATURED ENHANCED SPECIFICATIONS:

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♦

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MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Peak Repetitive Reverse Voltage

VRRM

120

V

Average Forward Current

IO

200

mA

Peak Forward Current

IFM

500

mA

Power Dissipation

PD

350

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IR

VR=50V

300

nA

IR

VR=50V, TA=125°C

100

μA

IR

VR=100V

500

nA

BVR

IR=100µA

120

150

V

VF

IF=1.0mA

0.55

0.59

0.65

V

VF

IF=10mA

0.67

0.72

0.77

V

VF

IF=100mA

0.85

0.91

1.0

V

CT

VR=0, f=1.0MHz

1.5

2.6

pF

trr

IR=IF=10mA, RL=100Ω, Rec. to 1.0mA

2.0

4.0

ns

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♦ Enhanced Specification

SOT-23 CASE

R4 (27-January 2010)

www.centra lsemi.com