STBP60L60A datasheet(2/7 Pages) SAMHOP

Part #	STBP60L60A

Description	Super high dense cell design for extremely low RDS(ON).7

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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4 Symbol

Min

Typ

Max

Units

BVDSS

60

V

1

IGSS

±100

nA

VGS(th)

2

V

15

gFS

48

S

VSD

CISS

2300

pF

COSS

142

pF

CRSS

108

pF

Qg

63

nC

71

nC

Qgs

162

nC

Qgd

42

tD(ON)

28

ns

tr

5

ns

tD(OFF)

11

ns

tf

ns

Gate-Drain Charge

VDS=25V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=30V

ID=1A

VGS=10V

RGEN=60 ohm

Total Gate Charge

Rise Time

Turn-Off DelayTime

VDS=30V,ID=25A,VGS=10V

Fall Time

Turn-On DelayTime

m ohm

VGS=10V , ID=32.5A

VDS=20V , ID=32.5A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

uA

Gate Threshold Voltage

VDS=VGS ,ID=250uA

VDS=48V , VGS=0V

VGS=±20V,VDS=0V

Zero Gate Voltage Drain Current

Gate-Body leakage current

ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V,ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

4

19

b

f=1.0MHz

b

VDS=30V,ID=25A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS

VGS=0V,IS=1A

0.75

1.3

V

Notes

STB/P60L60A

Ver 3.0

www.samhop.com.tw

Oct,13,2011

2

2.8

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)

_

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STBP60L60A Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

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