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BCW65ALT1 Datasheet(PDF) 1 Page - Leshan Radio Company

Part # BCW65ALT1
Description  General Purpose Transistors(NPN Silicon)
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Manufacturer  LRC [Leshan Radio Company]
Direct Link  http://www.lrc.cn/
Logo LRC - Leshan Radio Company

BCW65ALT1 Datasheet(HTML) 1 Page - Leshan Radio Company

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LESHAN RADIO COMPANY, LTD.
M11–1/2
1
3
2
General Purpose Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
32
Vdc
Collector–Base Voltage
V CBO
60
Vdc
Emitter–Base Voltage
V EBO
5.0
Vdc
Collector Current — Continuous
I C
800
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
PD
225
mW
TA = 25°C
Derate above 25°C
1.8
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
Total Device Dissipation
PD
300
mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
2.4
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
417
°C/W
Junction and Storage Temperature
TJ , Tstg
–55 to +150
°C
DEVICE MARKING
BCW65ALT1 = EA
ELECTRICAL CHARACTERISTICS (T
A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
V (BR)CEO
32
Vdc
(IC = 10mAdc, I B= 0 )
Collector–Emitter Breakdown Voltage
V (BR)CES
60
Vdc
(IC = 10
µAdc, V
EB = 0 )
Emitter–Base Breakdown Voltage
(I E= 10
µAdc, I
C = 0)
V (BR)EBO
5.0
Vdc
Collector Cutoff Current
I CES
(VCE = 32 Vdc, IE = 0 )
20
nAdc
(VCE = 32 Vdc, IE = 0 , TA = 150°C)
20
µAdc
Emitter Cutoff Current
(V EB= 4.0 Vdc, I C = 0)
I EBO
20
nAdc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BCW65ALT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)


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