SP2103 datasheet(4/7 Pages) SAMHOP

Part #	SP2103

Description	Super high dense cell design for low RDS(ON).

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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4 / 7 page

SP2103

Ver 1.3

www.samhop.com.tw

Jul,18,2013

4

VGS, Gate-to-Source Voltage(V)

Figure 7. On-Resistance vs.

Gate-Source Voltage

VSD, Body Diode Forward Voltage(V)

Figure 8. Body Diode Forward Voltage

Variation with Source Current

VDS, Drain-to-Source Voltage(V)

Figure 9. Capacitance

Qg, Total Gate Charge(nC)

Figure 10. Gate Charge

Rg, Gate Resistance(

Ω)

Figure 11. switching characteristics

VDS, Drain-Source Voltage(V)

Figure 12. Maximum Safe Operating Area

600

500

400

300

200

100

0

24

6

8

10

0

10

1

00 . 3

20

1.5

0.6

0 .9

1.2

600

500

400

300

200

100

0

10

15

20

25

30

10

8

6

4

2

0

03

6

1.5

4.5

7.5

9

125 C

ID=1.1A

75 C

Ciss

Coss

Crss

1

10

100

1

10

100

60

6

0

5

Tr

TD(off )

VDS=50V,ID=1A

VGS=10V

Tf

VDS=50V

ID=1.1A

25 C

125 C

0.1

1

10

1

R

DS

(O

N)

Limit

0.1

VGS=10V

TA=25 C

Single Pulse

10

0us

1m

s

10m

s

10

0m

s

DC

100

TD(on)

25 C

75 C

0.01

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SP2103 Datasheet(PDF) 4 Page - SamHop Microelectronics Corp.

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