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SP07N65 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part No. SP07N65
Description  Super high dense cell design for low RDS(ON).
Download  6 Pages
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Maker  SAMHOP [SamHop Microelectronics Corp.]
Homepage  http://www.samhop.com.tw
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SP07N65 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

   
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Symbol
Min
Typ
Max
Units
BVDSS
650
V
1
IGSS
±100
nA
VGS(th)
V
1.34
gFS
S
CISS
902
pF
COSS
90
pF
CRSS
11
pF
Qg
30
nC
16.5
52
39
tD(ON)
16.5
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=325V
ID=0.5A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
ohm
VGS=10V , ID=0.5A
VDS=10V , ID=0.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=520V , VGS=0V
VGS=±30V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
1.68
b
f=1.0MHz
b
SP07N65
www.samhop.com.tw
May,26,2014
2
nC
Qgs
nC
Qgd
2.7
6
Gate-Drain Charge
Gate-Source Charge
VDS=325V,ID=0.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VDS=325V,ID=0.5A,VGS=10V
VSD
Diode Forward Voltage
VGS=0V,IS=2A
0.78
1.2
V
Notes
a.Surface Mounted on FR4 Board of 1 inch2 ,1oz.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
2
2.8
4
2.3
Ver 1.0


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