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SDT03N04 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # SDT03N04
Description  S uper high dense cell des ign for low R DS (ON).
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SDT03N04 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
400
V
1
IGSS
±100
nA
VGS(th)
2
V
gFS
0.9
S
VSD
CISS
186
pF
COSS
31
pF
CRSS
6.3
pF
Qg
13
nC
10
nC
Qgs
21
nC
Qgd
5.5
tD(ON)
ns
tr
1.2
ns
tD(OFF)
1.6
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=200V
ID=1A
VGS=10V
RGEN=25 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=200V,ID=1A,VGS=10V
Fall Time
Turn-On Delay Time
ohm
VGS=10V , ID=1A
VDS=10V , ID=1A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=320V , VGS=0V
VGS= ±30V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
4
4.0
c
f=1.0MHz
c
VDS=200V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1A
1.4
V
Notes
SDT03N04
www.samhop.com.tw
Oct,08,2010
2
4.4
_
_
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Ver 1.2
3.5
IS
Maximum Continuous Drain-Source Diode Forward Current
1
A
_
0.79
2.9


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