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LED780-PD010-40D52 Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED780-PD010-40D52 Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 1 page www.roithner-laser.com 1 LED780-PD010-40D52 v 1.1 19.09.2014 LED780-PD010-40D52 consists of a GaAlAs LED 780 nm and a Si-PD mounted onTO-18 stem hermetically sealed with a glass flat can, and is designed to monitor reflected light through detector for controlling its own output power. Specifications Product Name: LED Lamp with PD Monitor Type No.: LED780-PD010-40D52 Chip material: GaAlAs , Si (PIN) Peak wavelength: 780 nm Package: Stem TO-18 Lens: Ø5 2.4 Flat Glass Can: Metal Can (Gold Plate ) Absolute Maximum Ratings [Ta=25°C] Device Item Symbol Maximum Rated Unit LED Power Dissipation PD 200 mW LED Forward Current IF 100 mA LED Pulse Forward Current IFP 500 A LED Reverse Voltage VR 5 V PD Reverse Voltage VR 100 V Operating Temperature TCASE -20 ~ +85 °C Storage Temperature TSTG -30 ~ +100 °C Soldering Temperature TSLD 260 °C Pulse Forward Current condition: Duty = 1%, tw = 10 µs Soldering condition: Soldering condition must be completed within 3 seconds at 250°C Electro-Optical Charactaristics [Ta=25°C] Item Symbol Condition Min. Typ. Max. Unit Forward Voltage VF IF=50mA 1.70 2.00 V Reverse Current IR VR=5V 10 uA Total Radiated Power PO IF=50mA 3.0 6.0 mW Radiant Intensity IE IF=50mA 2.5 5.0 mW/sr Peak Wavelength λ P IF=50mA 765 780 795 nm Half Width ∆λ IF=50mA 35 nm Viewing Half Angle φ IF=50mA ±55 deg. Rise Time tR IF=50mA 60 ns Fall Time tF IF=50mA 40 ns Output Current IL VR=0V 250 500 uA Dark Current ID VR=10V 10 nA Total Radiated Power is measured by Photodyne #500 © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice |
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