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PWB80A Datasheet(PDF) 1 Page - Naina Semiconductor ltd. |
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PWB80A Datasheet(HTML) 1 Page - Naina Semiconductor ltd. |
1 / 2 page Naina Semiconductor Ltd. PWB80A 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com Non-isolated Thyristor Module, 80A Features • Low voltage three-phase • High surge current capability • Easy construction • Non-isolated • Mounting base as common anode Voltage Ratings (TC = 25 OC unless otherwise specified) Parameter Symbol PWB80A30 PWB80A40 Units Maximum repetitive peak reverse voltage VRRM 300 400 V Maximum non-repetitive peak reverse voltage VRSM 360 480 V Maximum repetitive peak off-state voltage VDRM 300 400 V Thermal & Mechanical Specifications (TC = 25 OC unless otherwise specified) Parameter Symbol Values Units Operating junction temperature range TJ -30 to +150 0C Storage temperature range TSTG -30 to +125 0C Thermal resistance, junction to case Rth(JC) 0.35 0C/W Electrical Characteristics (TC = 25 OC unless otherwise specified) Parameter Conditions Symbol Values Units Average on-state current Single phase, half-wave, 180 0 conduction @ TC = 116 0C IT(AV) 80 A R.M.S. on-state current IT(RMS) 125 A On-state surge current half cycle, 50Hz/60Hz, peak value, non-repetitive ITSM 2500 A I 2t required for fusing I 2t 31250 A 2S Peak gate power dissipation PGM 10 W Average gate power dissipation PGM(AV) 1 W Peak gate current IGM 3 A Peak gate voltage (forward) VFGM 10 V Peak gate voltage (reverse) VRGM 5 V Critical rate of rise of on-state current IG = 200mA, VD = ½ VDRM , dIG/dt = 1 A/µs, TJ=25 0C di/dt 50 A/µs Critical rate of rise of off-state voltage TJ = 150 0C, V D = 2/3 V DRM , exponential wave dv/dt 50 V/µs Holding current TJ=25 0C IH 100 mA Peak on-state voltage TJ=25 0C VTM 1.20 V Repetitive Peak Reverse Current TJ=150 0C, single phase, half wave IRRM 12 mA Gate Trigger Current TJ = 25 OC, I T = 1A, VD=6V IGT 150 mA Gate Trigger Voltage TJ = 25 OC, I T = 1A, VD=6V VGT 2 V |
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