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PWB80A Datasheet(PDF) 1 Page - Naina Semiconductor ltd.

Part # PWB80A
Description  Non-isolated Thyristor Module, 80A
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Manufacturer  NAINA [Naina Semiconductor ltd.]
Direct Link  http://www.nainasemi.com
Logo NAINA - Naina Semiconductor ltd.

PWB80A Datasheet(HTML) 1 Page - Naina Semiconductor ltd.

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Naina Semiconductor Ltd.
PWB80A
1
D-95, Sector 63, Noida – 201301, India
Tel: 0120-4205450
Fax: 0120-4273653
sales@nainasemi.com
www.nainasemi.com
Non-isolated Thyristor Module, 80A
Features
Low voltage three-phase
High surge current capability
Easy construction
Non-isolated
Mounting base as common anode
Voltage Ratings (TC = 25
OC unless otherwise specified)
Parameter
Symbol
PWB80A30
PWB80A40
Units
Maximum repetitive peak
reverse voltage
VRRM
300
400
V
Maximum non-repetitive
peak reverse voltage
VRSM
360
480
V
Maximum repetitive peak
off-state voltage
VDRM
300
400
V
Thermal & Mechanical Specifications (TC = 25
OC unless otherwise specified)
Parameter
Symbol
Values
Units
Operating junction temperature range
TJ
-30 to +150
0C
Storage temperature range
TSTG
-30 to +125
0C
Thermal resistance, junction to case
Rth(JC)
0.35
0C/W
Electrical Characteristics (TC = 25
OC unless otherwise specified)
Parameter
Conditions
Symbol
Values
Units
Average on-state current
Single phase, half-wave, 180
0
conduction @ TC = 116
0C
IT(AV)
80
A
R.M.S. on-state current
IT(RMS)
125
A
On-state surge current
half cycle, 50Hz/60Hz, peak value,
non-repetitive
ITSM
2500
A
I
2t required for fusing
I
2t
31250
A
2S
Peak gate power dissipation
PGM
10
W
Average gate power dissipation
PGM(AV)
1
W
Peak gate current
IGM
3
A
Peak gate voltage (forward)
VFGM
10
V
Peak gate voltage (reverse)
VRGM
5
V
Critical rate of rise of on-state
current
IG = 200mA, VD = ½ VDRM , dIG/dt = 1
A/µs, TJ=25
0C
di/dt
50
A/µs
Critical rate of rise of off-state
voltage
TJ = 150
0C, V
D =
2/3 V
DRM ,
exponential wave
dv/dt
50
V/µs
Holding current
TJ=25
0C
IH
100
mA
Peak on-state voltage
TJ=25
0C
VTM
1.20
V
Repetitive Peak Reverse Current
TJ=150
0C, single phase, half wave
IRRM
12
mA
Gate Trigger Current
TJ = 25
OC, I
T = 1A, VD=6V
IGT
150
mA
Gate Trigger Voltage
TJ = 25
OC, I
T = 1A, VD=6V
VGT
2
V


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