52

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SMT100

All parameters are tested using a FET TEST

ELECTRICAL CHARACTERISTICS (Tamb 25°C)

ABSOLUTE MAXIMUM RATINGS (Tamb 25°C)

THERMAL RESISTANCE

SYMBOL

PARAMETER

SYMBOL

PARAMETER

V

RM

Stand-off Voltage

V

RO

Breakover Voltage

I

RM

Leakage Current at Stand-off Voltage

I

H

Holding current

V

R

Continuous Reverse Voltage

I

BO

Breakover Current

V

BR

Breakdown Voltage

I

PP

Peak pulse Current

C

Capacitance

I

R

Continuous Reverse Current

SYMBOL

PARAMETER

VALUE

UNIT

R

Junction to leads

20

R

Junction to ambient on printed circuit

100

(with standard footprint dimensions)

SYMBOL

PARAMETER

VALUE

UNIT

I

PP

Peak pulse Current:

10/1000µS (open circuit voltage waveform 1kV 10/1000µS)

100

A

5/310µS (open circuit voltage waveform 4kV 10/700µS)

150

A

8/20µS (open circuit voltage waveform 4kV 1.2/50µS)

250

A

2/10µS (open circuit voltage waveform 2.5kV 2/10µS)

500

A

I

TSM

Non-repetitive surge peak on-state current

50Hz

55

A

F = 50Hz

60Hz

60

A

Non-repetitive surge peak on-state current

0.2s

25

A

F = 50Hz

2s

12

A

T

L

Maximum lead temperature range

260

°C

T

stg

Storage temperature range

-55 to +150

°C

T

j

Maximum junction temperature

150

°C

Type

SMT100-35

SMT100-65

SMT100-120

SMT100-140

SMT100-200

SMT100-230

SMT100-270

Marking

Laser

B035

B065

B120

B140

B200

B230

B270

MAX

(µA)

(V)

MAX

(µA)

(V)

35

65

120

140

200

230

270

50

50

50

50

50

50

50

800

800

800

800

800

800

800

55

80

160

200

265

300

350

32

55

110

120

170

200

230

2

2

2

2

2

2

2

MAX

(V)

(mA)

MIN

(Note 1)

(mA)

150

150

150

150

150

150

150

C

MAX

(pF)

180

160

140

140

130

120

120