DFLS1100_15 datasheet(2/6 Pages) DIODES

Part #	DFLS1100

Description	1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERDI짰123

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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DFLS1100

Document number: DS30497 Rev. 12 - 2

2 of 6

www.diodes.com

September 2014

DFLS1100

POWERDI is a registered trademark of Diodes Incorporated.

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitance load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

100

V

RMS Reverse Voltage

VR(RMS)

71

V

Forward Current rms (TC = +160°C, D = 0.5)

IF(RMS)

2

A

Average Forward Current

IF(AV)

1.0

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

50

A

Repetitive Peak Reverse Current

tp = 2μs, f = I kHz Square

IRRM

1.0

A

Repetitive Peak Avalanche Power

tp = 1µs, TJ = +25°C

PARM

1500

W

Non-repetitive Peak Reverse Current

tp = 100μs Square

IRSM

1.0

A

Critical Rate of Rise of Reverse Voltage

(Rated VR, TJ = +25°C)

dV/dt

10000

V/μs

Thermal Characteristics

Characteristic

Symbol

Typ

Max

Unit

Thermal Resistance Junction to Soldering (Note 6)

RJS

—

7

°C/W

Thermal Resistance Junction to Ambient (Note 7) TA = +25°C

RJA

125

—

Thermal Resistance Junction to Case (Note 7) TA = +25°C

RJC

21

—

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 8)

V(BR)R

100



V

IR = 1µA

Forward Voltage

VF



0.77

V

IF = 1.0A, TA = +25C



0.58



0.62

IF = 1.0A, TA = +125C



0.86

IF = 2.0A, TA = +25C



0.65



0.7

IF = 2.0A, TA = +125C

Leakage Current (Note 8)

IR



1

µA

VR = 100V, TA = +25C



0.2

0.5

mA

VR = 100V, TA = +125C

Total Capacitance

CT



36



pF

VR = 5VDC, f = 1MHz

Notes:

6. Theoretical RθJS calculated from the top center of the die straight down to the PCB/cathode tab solder junction.

7. Part mounted on FR-4 board with 2oz., minimum recommended copper pad layout, which can be found on our website at http://www.diodes.com.

8. Short duration pulse test used to minimize self-heating effect.

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