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TSM4953D Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM4953D Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM4953D 30V Dual P-Channel MOSFET 1/6 Version: C12 SOP-8 PRODUCT SUMMARY VDS (V) RDS(on)(m Ω) ID (A) -30 60 @ VGS = 10V -4.9 90 @ VGS = 4.5V -3.7 Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM4953DCS RL SOP-8 2.5Kpcs / 13” Reel TSM4953DCS RLG SOP-8 2.5Kpcs / 13” Reel Note: “G” denotes Halogen Free Product. Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS @4.5V. ID -4.9 A Pulsed Drain Current, VGS @4.5V IDM -20 A Continuous Source Current (Diode Conduction) a,b IS -2.6 A Maximum Power Dissipation Ta = 25 oC PD 2.5 W Ta = 70 oC 1.3 Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance RӨJC 40 oC/W Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 62.5 oC/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 Dual P-Channel MOSFET |
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