CBR10-010P SERIES

SILICON BRIDGE RECTIFIERS

10 AMP, 100 THRU 1000 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBR10-010P series

devices are silicon, single phase, full wave bridge rectifiers

designed for general purpose applications. The molded

epoxy case has a built-in metal baseplate for heat sink

mounting. The device utilizes standard 0.25” FASTON

terminals.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

CBR10

SYMBOL

-010P

-020P

-040P

-060P

-080P

-100P

UNITS

Peak Repetitive Reverse Voltage

VRRM

100

200

400

600

800

1000

V

DC Blocking Voltage

VR

100

200

400

600

800

1000

V

RMS Reverse Voltage

VR(RMS)

70

140

280

420

560

700

V

Average Forward Current (TC=60°C)

IO

10

A

Peak Forward Surge Current

IFSM

200

A

160

RMS Isolation Voltage (case to lead)

Viso

2500

Vac

Operating and Storage

Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

1.9

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

TYP

MAX

UNITS

IR

VR=Rated VRRM

10

μA

IR

VR=Rated VRRM, TA=125°C

500

μA

VF

IF=5.0A

1.2

V

CJ

VR=4.0V, f=1.0MHz

300

pF

CASE FP

R3 (24-June 2013)

www.centr a lsemi.com