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CBR10F-010P Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part # CBR10F-010P
Description  FAST RECOVERY SILICON BRIDGE RECTIFIERS
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

CBR10F-010P Datasheet(HTML) 1 Page - Central Semiconductor Corp

  CBR10F-010P_15 Datasheet HTML 1Page - Central Semiconductor Corp CBR10F-010P_15 Datasheet HTML 2Page - Central Semiconductor Corp  
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CBR10F-010P SERIES
FAST RECOVERY
SILICON BRIDGE RECTIFIERS
10 AMP, 100 THRU 600 VOLT
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR10F-010P series
devices are silicon, single phase, full wave bridge rectifiers
designed for fast recovery applications. The molded
epoxy case has a built-in metal baseplate for heat sink
mounting. The device utilizes standard 0.25” FASTON
terminals.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
CBR10F
SYMBOL -010P
-020P
-040P
-060P
UNITS
Peak Repetitive Reverse Voltage
VRRM
100
200
400
600
V
DC Blocking Voltage
VR
100
200
400
600
V
RMS Reverse Voltage
VR(RMS)
70
140
280
420
V
Average Forward Current (TC=60°C)
IO
10
A
Peak Forward Surge Current
IFSM
200
A
RMS Isolation Voltage (case to lead)
Viso
2500
Vac
Operating and StorageJunction Temperature
TJ, Tstg
-65 to +150
°C
Thermal Resistance
ΘJC
1.5
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=Rated VRRM
10
μA
VF
IF=5.0A
1.3
V
trr
IF=0.5A, IR=1.0A, Irr=0.25A (100V, 200V, 400V)
200
ns
trr
IF=0.5A, IR=1.0A, Irr=0.25A (600V)
350
ns
CASE FP
R1 (4-November 2013)
www.centr a lsemi.com


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