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TSM650P03CX Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM650P03CX Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 5 page TSM650P03CX 30V P-Channel Power MOSFET 1/5 Version: A14 SOT-23 Key Parameter Performance Parameter Value Unit VDS -30 V RDS(on) (max) VGS =- 10V 65 m Ω VGS = -4.5V 75 VGS = -2.5V 100 Qg 8 nC Features ● Fast Switching ● Suited for -2.5V Gate Drive Applications ● Halogen-free Block Diagram P-Channel MOSFET Ordering Information Part No. Package Packing TSM650P03CX RFG SOT-23 3kcs / 7 ” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (T C = 25°C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current TC = 25°C ID -4.1 A TC = 100°C -2.6 A Pulsed Drain Current (Note 1) IDM -16.4 A Power Dissipation @ TC = 25℃ PD 1.56 W Operating Junction Temperature TJ 150 ° C Storage Temperature Range TSTG -55 to +150 ° C Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Ambient RӨJA 80 ° C/W Pin Definition: 1. Gate 2. Source 3. Drain |
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