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TSM600P03CSRLG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM600P03CSRLG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 5 page  TSM600P03CS 30V P-Channel Power MOSFET 2/5 Version: A14 Electrical Specifications (TJ=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = -250µA BVDSS -30 -- -- V Drain-Source On-State Resistance VGS = -10V, ID = -3A RDS(ON) -- 44 60 m Ω VGS = -4.5V, ID = -2A -- 73 90 Gate Threshold Voltage VDS = VGS, ID = -250µA VGS(TH) -1.2 -1.6 -2.5 V Zero Gate Voltage Drain Current VDS = -30V, TJ = 25ºC IDSS -- -- -1 µA VDS = -24V, TJ = 125ºC -- -- -10 Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance (Note 2) VDS = -10V, ID = -3A gfs -- 3.5 -- S Dynamic Total Gate Charge (Note 2,3) VDS = -15V, ID = -3A, VGS = -4.5V Qg -- 5.1 -- nC Gate-Source Charge (Note 2,3) Qgs -- 2 -- Gate-Drain Charge (Note 2,3) Qgd -- 2.2 -- Input Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz Ciss -- 560 -- pF Output Capacitance Coss -- 55 -- Reverse Transfer Capacitance Crss -- 40 -- Switching Turn-On Delay Time (Note 2,3) VDD = -15V, ID = -1A, VGS = -10V, RG =6Ω td(on) -- 3.4 -- ns Turn-On Rise Time (Note 2,3) tr -- 10.8 -- Turn-Off Delay Time (Note 2,3) td(off) -- 26.9 -- Turn-Off Fall Time (Note 2,3) tf -- 6.9 -- Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in the MOSFET IS -- -- -4.7 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- -18.8 A Diode-Source Forward Voltage VGS = 0V, IS = -1A VSD -- -- -1 V Note: 1. Pulse width limited by safe operating area 2. Pulse test: pulse width ≤300µs, duty cycle ≤2% 3. Switching time is essentially independent of operating temperature. |
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