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TSM240N03CXRFG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # TSM240N03CXRFG
Description  30V N-Channel Power MOSFET
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM240N03CXRFG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM240N03CX
30V N-Channel Power MOSFET
2/5
Version: A14
Electrical Specifications (T
C = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
30
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 6A
RDS(on)
--
17
24
m
Ω
VGS = 4.5V, ID = 4A
--
22
34
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1.2
1.4
2.5
V
Zero Gate Voltage Drain Current
VDS = 30V, VGS = 0V
IDSS
--
--
1
µA
VDS = 24V, TJ = 125°C
--
--
10
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
µA
Forward Transconductance
(Note 3)
VDS = 10V, ID = 4A
gfs
--
6.5
--
S
Dynamic
Total Gate Charge
(Note 3,4)
VDS = 15V, ID = 6A,
VGS = 4.5V
Qg
--
4.1
--
nC
Gate-Source Charge
(Note 3,4)
Qgs
--
1
--
Gate-Drain Charge
(Note 3,4)
Qgd
--
2.1
--
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ciss
--
345
--
pF
Output Capacitance
Coss
--
55
--
Reverse Transfer Capacitance
Crss
--
32
--
Switching
Turn-On Delay Time
(Note 3,4)
VDD = 15V, ID = 1A,
VGS = 10V, RG = 6Ω
td(on)
--
2.8
--
ns
Turn-On Rise Time
(Note 3,4)
tr
--
7.2
--
Turn-Off Delay Time
(Note 3,4)
td(off)
--
15.8
--
Turn-Off Fall Time
(Note 3,4)
tf
--
4.6
--
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Integral reverse diode in
the MOSFET
IS
--
--
6.5
A
Maximum Pulse Drain-Source Diode
Forward Current
ISM
--
--
26
A
Diode-Source Forward Voltage
VGS = 0V, IS = 1A
VSD
--
--
1
V
Note:
1.
Pulse width limited by safe operating area
2.
L = 1mH, IAS = 8A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C
3.
Pulse test: pulse width
≤ 300µs, duty cycle ≤ 2%
4.
Switching time is essentially independent of operating temperature.


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