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TSM240N03CXRFG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM240N03CXRFG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 5 page TSM240N03CX 30V N-Channel Power MOSFET 2/5 Version: A14 Electrical Specifications (T C = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 6A RDS(on) -- 17 24 m Ω VGS = 4.5V, ID = 4A -- 22 34 Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.2 1.4 2.5 V Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V IDSS -- -- 1 µA VDS = 24V, TJ = 125°C -- -- 10 Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 µA Forward Transconductance (Note 3) VDS = 10V, ID = 4A gfs -- 6.5 -- S Dynamic Total Gate Charge (Note 3,4) VDS = 15V, ID = 6A, VGS = 4.5V Qg -- 4.1 -- nC Gate-Source Charge (Note 3,4) Qgs -- 1 -- Gate-Drain Charge (Note 3,4) Qgd -- 2.1 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 345 -- pF Output Capacitance Coss -- 55 -- Reverse Transfer Capacitance Crss -- 32 -- Switching Turn-On Delay Time (Note 3,4) VDD = 15V, ID = 1A, VGS = 10V, RG = 6Ω td(on) -- 2.8 -- ns Turn-On Rise Time (Note 3,4) tr -- 7.2 -- Turn-Off Delay Time (Note 3,4) td(off) -- 15.8 -- Turn-Off Fall Time (Note 3,4) tf -- 4.6 -- Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in the MOSFET IS -- -- 6.5 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- 26 A Diode-Source Forward Voltage VGS = 0V, IS = 1A VSD -- -- 1 V Note: 1. Pulse width limited by safe operating area 2. L = 1mH, IAS = 8A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C 3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 4. Switching time is essentially independent of operating temperature. |
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