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TSM60N900CHC5G Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM60N900CHC5G Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 9 page  TSM60N900 600V, 4.5A, 0.9 Ω N-Channel Power MOSFET 2/9 Version: B14 Thermal Performance Parameter Symbol Limit Unit ITO-220 IPAK/DPAK Junction to Case Thermal Resistance RӨJC 6.25 2.5 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static (Note 4) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2 3 4 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance VGS = 10V, ID = 2.3A RDS(ON) -- 0.72 0.9 Ω Dynamic (Note 5) Total Gate Charge VDS = 380V, ID = 2.3A, VGS = 10V Qg -- 9.7 -- nC Gate-Source Charge Qgs -- 2.3 -- Gate-Drain Charge Qgd -- 3.6 -- Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Ciss -- 480 -- pF Output Capacitance Coss -- 36 -- Gate Resistance f=1MHz, open drain Rg -- 3.4 -- Ω Switching (Note 6) Turn-On Delay Time VDD = 380V, RGEN = 4.7Ω, ID = 2.3A, VGS = 10V, td(on) -- 12 -- ns Turn-On Rise Time tr -- 16 -- Turn-Off Delay Time td(off) -- 22 -- Turn-Off Fall Time tf -- 12 -- Source-Drain Diode (Note 4) Forward On Voltage IS=4.5A, VGS=0V VSD -- -- 1.4 V Reverse Recovery Time VR=200V, IS=2.3A dIF/dt=100A/μs trr -- 179 -- ns Reverse Recovery Charge Qrr -- 1.2 -- μC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L=50mH, IAS=1.8A, VDD=50V, RG=25Ω, Starting TJ = 25°C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. |
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