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DUV280-CHIP Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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DUV280-CHIP Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
1 / 5 page www.roithner-laser.com 1 DUV280-CHIP • Deep Ultraviolet Light Emission Source • 280 nm, 2.0 mW • Naked Bare Die • Flip chip type • Beam angle 144 deg. Maximum Rating (T CASE = 25°C) Parameter Symbol Values Unit Min. Max. Forward Current (TA=25°C) IF 40 mA Reverse Current (VR=5V) IR 100 µA Reverse Voltage (IR=10µA) VR 5 V Operating Temperature TOPR - 30 + 80 °C Storage Temperature TSTG - 40 + 100 °C Soldering Temperature (max. 5s) TSOL + 300 °C Electro-Optical Characteristics (T CASE = 25°C, IF =20 mA) Parameter Symbol Values Unit min. Typ. Max. Peak Wavelength λP 275 280 285 nm Radiated Power PO 1.0 2.0 mW Spectral Width (FWHM) ∆λ 10 nm Forward Voltage VF 7.0 8.0 V Viewing Angle 2Ө1/2 144 deg. Thermal resistance R ӨJ-REF 190 °C/W Rise time* tR / ns Fall time* tF / ns * frequency=100kHz, duty cycle=1%, IFP=200mA Description DUV280-CHIP is an AlGaN based DEEP-UV LED emission source, that is available as bare chip die, and in two different submount configurations. DUV280-CHIP is of Flip Chip type without any bonding wires obscuring the emitting area. rev.2.0 08.05.15 |
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