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TSM35N03PQ56RLG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # TSM35N03PQ56RLG
Description  30V N-Channel Power MOSFET
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM35N03PQ56RLG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM35N03PQ56
30V N-Channel Power MOSFET
2/4
Version: B14
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
30
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 12A
RDS(ON)
--
5.5
7
VGS = 4.5V, ID = 10A
--
7.5
9
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1.3
--
2.5
V
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
IDSS
--
--
1
µA
Gate Body Leakage
VGS = ±25V, VDS = 0V
IGSS
--
--
±100
nA
Dynamic
Total Gate Charge
VDS = 15V, ID = 16A,
VGS = 4.5V
Qg
--
8.2
--
nC
Gate-Source Charge
Qgs
--
2.7
--
Gate-Drain Charge
Qgd
--
2.2
--
Input Capacitance
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ciss
--
1050
--
pF
Output Capacitance
Coss
--
210
--
Reverse Transfer Capacitance
Crss
--
90
--
Switching
Turn-On Delay Time
VGS = 10V, VDS = 15V,
RG = 1Ω
td(on)
--
9
--
ns
Turn-On Rise Time
tr
--
9
--
Turn-Off Delay Time
td(off)
--
20
--
Turn-Off Fall Time
tf
--
7
--
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
VGS=0V, IS=2.3A
VSD
--
0.75
1.3
V
Reverse Recovery Time
IS = 3.2A, TJ=25
oC
dI/dt = 100A/µs
tfr
--
22
--
ns
Reverse Recovery Charge
Qfr
--
14
--
nC
Notes:
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA
is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air
3. The maximum current rating is limited by package.


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