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TSM35N03PQ56RLG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM35N03PQ56RLG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 4 page TSM35N03PQ56 30V N-Channel Power MOSFET 2/4 Version: B14 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 30 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 12A RDS(ON) -- 5.5 7 mΩ VGS = 4.5V, ID = 10A -- 7.5 9 Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 1.3 -- 2.5 V Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±25V, VDS = 0V IGSS -- -- ±100 nA Dynamic Total Gate Charge VDS = 15V, ID = 16A, VGS = 4.5V Qg -- 8.2 -- nC Gate-Source Charge Qgs -- 2.7 -- Gate-Drain Charge Qgd -- 2.2 -- Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz Ciss -- 1050 -- pF Output Capacitance Coss -- 210 -- Reverse Transfer Capacitance Crss -- 90 -- Switching Turn-On Delay Time VGS = 10V, VDS = 15V, RG = 1Ω td(on) -- 9 -- ns Turn-On Rise Time tr -- 9 -- Turn-Off Delay Time td(off) -- 20 -- Turn-Off Fall Time tf -- 7 -- Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward Voltage VGS=0V, IS=2.3A VSD -- 0.75 1.3 V Reverse Recovery Time IS = 3.2A, TJ=25 oC dI/dt = 100A/µs tfr -- 22 -- ns Reverse Recovery Charge Qfr -- 14 -- nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air 3. The maximum current rating is limited by package. |
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