TSM7N65

650V N-Channel Power MOSFET

1/9

Version: D12

TO-220

ITO-220

PRODUCT SUMMARY

Ω)

650

6.4

General Description

The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior

switching performance, and withstand high energy pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp

ballast based on half bridge.

Features

●

●

Low gate charge typical @ 32nC (Typ.)

●

Low Crss typical @ 25pF (Typ.)

●

Fast Switching

Block Diagram

N-Channel MOSFET

Ordering Information

Part No.

Package

Packing

TSM7N65CZ C0

TO-220

50pcs / Tube

TSM7N65CI C0

ITO-220

50pcs / Tube

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Continuous Drain Current

Ta =25ºC

6.4

A

Ta =100ºC

3.8

A

Pulsed Drain Current *

22

A

Single Pulse Avalanche Energy (Note 2)

216

mJ

Repetitive Avalanche Current (Note 1)

6

A

TO-220

125

W

ITO-220

30

Operating Junction Temperature

150

ºC

Storage Temperature Range

-55 to +150

* Limited by maximum junction temperature

Pin Definition:

1. Gate

2. Drain

3. Source