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TSM6N50 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM6N50 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 8 page  TSM6N50 500V N-Channel Power MOSFET 2/8 Version: D14 Thermal Performance Parameter (Note 4) Symbol Limit Unit Thermal Resistance - Junction to Case ITO-220 RӨJC 5 oC/W TO-252. TO-251 2.78 Thermal Resistance - Junction to Ambient RӨJA 62.5 oC/W Electrical Specifications (TJ=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2.8A RDS(ON) -- 1.15 1.4 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.0 -- 4.0 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 µA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±10 µA Forward Transfer Conductance VDS = 8V, ID = 1A gfs -- 2.6 -- S Dynamic (Note 5,6) Total Gate Charge VDS = 400V, ID = 5A, VGS = 10V Qg -- 25 33 nC Gate-Source Charge Qgs -- 5 -- Gate-Drain Charge Qgd -- 10 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Ciss -- 680 900 pF Output Capacitance Coss -- 85 110 Reverse Transfer Capacitance Crss -- 15 20 Switching (Note 5,6) Turn-On Delay Time VGS = 10V, ID = 5A, VDD = 250V, RG =25Ω td(on) -- 20 50 ns Turn-On Rise Time tr -- 40 90 Turn-Off Delay Time td(off) -- 90 190 Turn-Off Fall Time tf -- 45 100 Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in the MOSFET IS -- -- 5 A Source Current (Pulse) ISM -- -- 15 A Diode Forward Voltage IS = 5A, VGS = 0V VSD -- -- 1.6 V Reverse Recovery Time VGS = 0V, IS = 5A, dIF/dt = 100A/µs tfr -- 430 -- ns Reverse Recovery Charge Qfr -- 2 -- µC Note: 1. Limited by maximum junction temperature 2. VDD = 50V, IAS=5A, L=10mH, Starting TJ=25ºC 3. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 4. Surface mounted on FR4 board t ≤ 10sec 5. Pulse test: pulse width ≤300µS, duty cycle ≤2% 6. Essentially Independent of Operating Temperature |
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