TSG25N120CN

N-Channel IGBT with FRD.

1/9

Version: B12

TO-3PN

PRODUCT SUMMARY

1200

±20

25

General Description

The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers

superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This

device is well suited for the resonant or soft switching application such as induction heating, microwave oven,

etc.

Features

●

1200V NPT Trench Technology

●

High Speed Switching

●

Low Conduction Loss

Block Diagram

NPT Trench IGBT

Ordering Information

Part No.

Package

Packing

TSG25N120CN C0

TO-3PN

30pcs / Tube

Parameter

Symbol

Limit

Unit

Collector-Emitter Voltage

1200

V

Gate-Emitter Voltage

±20

V

Continuous Current

50

A

25

A

Pulsed Collector Current *

75

A

)

℃

25

A

Diode Pulse Forward Current

75

A

Max Power Dissipation

312

W

125

Operating Junction Temperature

-55 to +150

ºC

Storage Temperature Range

-55 to +150

* Repetitive rating: Pulse width limited by max. junction temperature

Pin Definition:

1. Gate

2. Collector

3. Emitter