SiA459EDJ

www.vishay.com

Vishay Siliconix

S13-2182-Rev. A, 14-Oct-13

1

Document Number: 62912

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

P-Channel 20 V (D-S) MOSFET

FEATURES

- Small Footprint Area

- Low On-Resistance

• Typical ESD Protection: 2000 V (HBM)

• Material categorization: For definitions of compliance

APPLICATIONS

• Portable Devices such as Smart Phones,

Tablet PCs and Mobile Computing

- DC/DC Converter

- Battery Switch

- Load Switch

- Power Management

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 80 °C/W.

PRODUCT SUMMARY

- 20

- 9

10 nC

- 9

- 9

PowerPAK SC-70-6L-Single

6

5

4

1

2

3

D

D

D

D

G

S

S

2.05 mm

2.05 mm

Ordering Information:

SiA459EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

S

D

G

Marking Code

X X X

B 3 X

Lot Traceability

and Date code

Part # code

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

- 20

V

Gate-Source Voltage

± 12

A

Pulsed Drain Current (t = 100 μs)

- 40

Continuous Source-Drain Diode Current

Maximum Power Dissipation

15.6

W

10

Operating Junction and Storage Temperature Range

- 50 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

 5 s

32

43

°C/W

Maximum Junction-to-Case (Drain)

Steady State

68