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VS-P101 Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. VS-P101
Description  Power Modules, Passivated Assembled Circuit Elements
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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VS-P101 Datasheet(HTML) 3 Page - Vishay Siliconix

   
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VS-P100 Series
www.vishay.com
Vishay Semiconductors
Revision: 27-Mar-14
3
Document Number: 93754
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound
Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)
Fig. 2 - On-State Power Loss Characteristics
Fig. 3 - On-State Power Loss Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
and storage temperature range
TJ, TStg
-40 to 125
°C
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
2.24
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.10
Mounting torque, base to heatsink (1)
4Nm
Approximate weight
58
g
2.0
oz.
Case style
PACE-PAK (D-19)
Total Output Current (A)
510
15
20
25
0
0
60
50
40
30
20
10
93754_01a
~
+
-
180°
(sine)
T
J = 125 °C
Maximum Allowable
Ambient Temperature (°C)
25
75
50
100
125
0
60
50
40
30
20
10
0
93754_01b
R
th
SA =
15
K/W
- Δ
R
2 K/W
3 K/W
7 K/W
10 K/W
5 K/W
Average On-State Current (A)
10
15
05
15
10
5
0
93754_02
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
T
J = 125 °C
Per junction
Average On-State Current (A)
20
010
15
5
20
10
15
5
0
93754_03
DC
180°
120°
90°
60°
30°
RMS limit
T
J = 125 °C
Per junction
Conduction period
Ø


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