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BZW04-85B Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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BZW04-85B Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page 
CREAT BY ART (TA=25 oC unless otherwise noted) Document Number: DS_D1406028 Version: H14 BZW04 SERIES Taiwan Semiconductor RATINGS AND CHARACTERISTICS CURVES 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (oC) FIG.2 PULSE DERATING CURVE 0 20 40 60 80 100 120 140 00.511.522.533.5 4 t, TIME ms FIG. 3 CLAMPING POWER PULSE WAVEFORM td Peak Value IPPM tr=10μs Half Value- 10/1000μs, WAVEFORM as DEFINED by R.E.A. PULSE WIDTH(td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% OF IPPM 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 tp, PULSE WIDTH, (mS) FIG. 1 PEAK PULSE POWER RATING CURVE NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 TA = 25oC 0 10 20 30 40 50 110 100 V(BR), BREAKDOWN VOLTAGE (V) FIG. 5 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY 8.3ms Single Half Sine Wave 0 0.25 0.5 0.75 1 1.25 0 25 50 75 100 125 150 175 200 TL, LEAD TEMPERATURE (oC) FIG.4 STEADY STATE POWER DERATING CURVE |
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