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TSSE3H45 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSSE3H45 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 5 page  - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ high efficiency - High forward surge capability - Halogen-free according to IEC 61249-2-21 definition - Moisture sensitivity level: level 1, per J-STD-020 Case: SOD123HE Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test VRRM V VRMS V IF(AV) A Typ. Max. Typ. Max. IF = 3A TJ = 25°C 0.47 0.57 0.50 0.60 IF = 3A TJ = 125°C 0.40 0.50 0.43 0.53 TJ = 25°C μA TJ = 125°C mA RθJL °C/W TJ °C TSTG °C Document Number: DS_D0000009 Version: A15 TSSE3H45 - TSSE3H60 3A, 45V - 60V Trench Schottky Rectifiers TSSE3H45 TSSE3H60 VF Taiwan Semiconductor SYMBOL MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) PARAMETER E3H45 Operating junction temperature range Maximum repetitive peak reverse voltage 3 IFSM E3H60 UNIT Marking code Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load 20 SOD123HE Note 1: Pulse test with pulse width = 300μs, 1% duty cycle - 55 to +150 A 45 60 60 Maximum Instantaneous reverse current at rated reverse voltage Instantaneous forward voltage (Note 1) IR Storage temperature range - 55 to +150 Maximum average forward rectified current Polarity: Indicated by cathode band Weight: 0.022 g (approximately) Maximum RMS voltage 32 42 V 25 Typical thermal resistance 100 FEATURES - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS Trench Schottky barrier rectifiers are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board DC/DC converters, USB power delivery. MECHANICAL DATA |
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