1N5062 datasheet(1/5 Pages) VISHAY

Part #	1N5062

Description	Standard Avalanche Sinterglass Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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1N5059, 1N5060, 1N5061, 1N5062

www.vishay.com

Vishay Semiconductors

Rev. 1.7, 12-Sep-12

1

Document Number: 86000

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Standard Avalanche Sinterglass Diode

MECHANICAL DATA

Case: SOD-57

Terminals: plated axial leads, solderable per MIL-STD-750,

method 2026

Polarity: color band denotes cathode end

Mounting position: any

Weight: approx. 369 mg

FEATURES

• Glass passivated junction

• Hermetically

sealed

axial-leaded

glass

envelope

• Controlled avalanche characteristics

• Low reverse current

• High surge current loading

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Rectification diode, general purpose

949539

ORDERING INFORMATION (Example)

DEVICE NAME

ORDERING CODE

TAPED UNITS

MINIMUM ORDER QUANTITY

1N5062

1N5062TR

5000 per 10" tape and reel

25 000

1N5062

1N5062TAP

5000 per ammopack

25 000

PARTS TABLE

PART

TYPE DIFFERENTIATION

PACKAGE

1N5059

VR = 200 V; IF(AV) = 2 A

SOD-57

1N5060

VR = 400 V; IF(AV) = 2 A

SOD-57

1N5061

VR = 600 V; IF(AV) = 2 A

SOD-57

1N5062

VR = 800 V; IF(AV) = 2 A

SOD-57

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

VALUE

UNIT

Reverse voltage = repetitive peak reverse

voltage

See electrical characteristics

1N5059

VR = VRRM

200

V

1N5060

VR = VRRM

400

V

1N5061

VR = VRRM

600

V

1N5062

VR = VRRM

800

V

Peak forward surge current

tp = 10 ms, half sine wave

IFSM

50

A

Average forward current

TthJA = 45 K/W, Tamb = 50 °C

IF(AV)

2A

TthJA = 100 K/W, Tamb = 75 °C

IF(AV)

0.8

A

Pulse energy in avalanche mode, non

repetitive (inductive load switch off)

I(BR)R = 1 A, inductive load

ER

20

mJ

Junction and storage temperature range

Tj = Tstg

- 55 to + 175

°C

MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Junction ambient

Lead length l = 10 mm, TL = constant

RthJA

45

K/W

On PC board with spacing 25 mm

RthJA

100

K/W

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