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SS23 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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SS23 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page CREAT BY ART - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test VRRM 20 30 40 50 60 90 100 150 V VRMS 14 21 28 35 42 63 70 105 V VDC 20 30 40 50 60 90 100 150 V IF(AV) A dV/dt V/μs TJ OC TSTG OC Document Number: D1307005 Version: H13 DO-214AA (SMB) Case: DO-214AA (SMB) FEATURES SS 215 SS 25 SS 26 SS 29 Polarity: Indicated by cathode band SS22 thru SS215 Surface Mount Schottky Barrier Rectifier Taiwan Semiconductor MECHANICAL DATA - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Moisture sensitivity level: level 1, per J-STD-020 Maximum average forward rectified current MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) SS 23 SS 24 SS 22 PARAMETER SYMBOL SS 210 Note 1: Pulse test with PW=300μs, 1% duty cycle Operating junction temperature range Storage temperature range mA Voltage rate of change (Rated VR) - Maximum reverse current @ rated VR TJ=25 ℃ TJ=100℃ TJ=125 ℃ 10 5 - 55 to +150 0.4 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 2 50 UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage 0.5 0.4 0.70 0.65 IR Weight: 0.093 g (approximately) OC/W 10000 0.85 0.70 V A - - 5 0.1 0.95 0.80 - 55 to +125 - 55 to +150 Maximum DC blocking voltage Typical thermal resistance RθJL RθJA 24 70 Maximum instantaneous forward voltage (Note 1) IF= 2 A @ 25℃ IF= 2 A @ 100℃ VF |
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