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RU7080L Datasheet(PDF) 2 Page - Ruichips Semiconductor Co., Ltd |
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RU7080L Datasheet(HTML) 2 Page - Ruichips Semiconductor Co., Ltd |
2 / 8 page RU7080L Min. Typ. Max. BVDSS Drain-Source Breakdown Voltage 70 V 1 TJ=125°C 30 VGS(th) Gate Threshold Voltage 2 3 4 V IGSS Gate Leakage Current ±100 nA RDS(ON) ④ Drain-Source On-state Resistance 5.7 8 mΩ VSD ④ Diode Forward Voltage 1.2 V trr Reverse Recovery Time 45 ns Qrr Reverse Recovery Charge 93 nC RG Gate Resistance 1.5 Ω Ciss Input Capacitance 3450 Coss Output Capacitance 930 Crss Reverse Transfer Capacitance 230 td(ON) Turn-on Delay Time 40 tr Turn-on Rise Time 132 td(OFF) Turn-off Delay Time 180 tf Turn-off Fall Time 90 Qg Total Gate Charge 67 Qgs Gate-Source Charge 14 Qgd Gate-Drain Charge 22 Notes: Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2013 2 www.ruichips.com VDS=VGS, IDS=250µA Static Characteristics Symbol Parameter Test Condition RU7080L Unit VGS=0V, IDS=250µA IDSS Zero Gate Voltage Drain Current VDS=70V, VGS=0V µA Electrical Characteristics (T C=25°C Unless Otherwise Noted) VDD=35V, IDS=40A, VGEN=10V,RG=4.7Ω VDS=56V, VGS=10V, IDS=40A ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 60A. ③Limited by T Jmax, IAS =30A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing. Gate Charge Characteristics ⑤ nC ns ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=35V, Frequency=1.0MHz pF Dynamic Characteristics ⑤ VGS=±25V, VDS=0V VGS=10V, IDS=40A Diode Characteristics |
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