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LT1185MK Datasheet(PDF) 3 Page - Linear Technology |
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LT1185MK Datasheet(HTML) 3 Page - Linear Technology |
3 / 16 page 3 LT1185 ELECTRICAL CHARACTERISTICS The q denotes specifications which apply over the operating temperature range, otherwise specifications are at TA = 25°C. Adjustable version, VIN = 7.4V, VOUT = 5V, IOUT = 1mA, RLIM = 4.02k, unless otherwise noted. PARAMETER CONDITIONS MIN TYP MAX UNITS External Current Limit 5k ≤ RLIM ≤ 15k, VOUT = 1V q 15k A• Ω Programming Constant (Note 11) External Current Limit Error 1A ≤ ILIM ≤ 3A 0.02 ILIM 0.06 ILIM + 0.03 A RLIM = 15k • A/ILIM q 0.04 ILIM 0.09 ILIM + 0.05 A Quiescent Supply Current IOUT = 5mA, VOUT = VREF q 2.5 3.5 mA 4V ≤ VIN ≤ 25V (Note 5) Supply Current Change with Load VIN – VOUT = VSAT (Note 10) q 25 40 mA/A VIN – VOUT ≥ 2V q 10 25 mA/A REF Pin Shutoff Current q 0.4 2 7 µA Thermal Regulation (See Applications VIN – VOUT = 10V 0.005 0.014 %/W Information) IOUT = 5mA to 2A Reference Voltage Temperature Coefficient (Note 8) 0.003 0.01 %/ °C Thermal Resistance Junction to Case TO-3 Control Area 1 °C/W Power Transistor 3 °C/W TO-220 Control Area 1 °C/W Power Transistor 3 °C/W Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Reference voltage is guaranteed both at nominal conditions (no load, 25 °C) and at worst-case conditions of load, line, power and temperature. An intermediate value can be calculated by adding the effects of these variables in the actual application. See the Applications Information section of this data sheet. Note 3: Dropout voltage is tested by reducing input voltage until the output drops 1% below its nominal value. Tests are done at 0.5A and 3A. The power transistor looks basically like a pure resistance in this range so that minimum differential at any intermediate current can be calculated by interpolation; VDROPOUT = 0.25V + 0.25Ω • IOUT. For load current less than 0.5A, see graph. Note 4: “Minimum input voltage” is limited by base emitter voltage drive of the power transistor section, not saturation as measured in Note 3. For output voltages below 4V, “minimum input voltage” specification may limit dropout voltage before transistor saturation limitation. Note 5: Supply current is measured on the ground pin, and does not include load current, RLIM, or output divider current. Note 6: The 25W power level is guaranteed for an input-output voltage of 8.3V to 17V. At lower voltages the 3A limit applies, and at higher voltages the internal power limiting may restrict regulator power below 25W. See graphs. Note 7: Line and load regulation are measured on a pulse basis with a pulse width of ≈2ms, to minimize heating. DC regulation will be affected by thermal regulation and temperature coefficient of the reference. See Applications Information section for details. Note 8: Guaranteed by design and correlation to other tests, but not tested. Note 9: TJMIN = 0°C for the LT1185C, – 40°C for LT1185I, and –55°C for the LT1185M. Power transistor area and control circuit area have different maximum junction temperatures. Control area limits are TJMAX = 125°C for the LT1185C and LT1185I and 150 °C for the LT1185M. Power area limits are 150 °C for LT1185C and LT1185I and 175°C for LT1185M. Note 10: VSAT is the maximum specified dropout voltage; 0.25V + 0.25 • IOUT. Note 11: Current limit is programmed with a resistor from REF pin to GND pin. The value is 15k/ILIM. Note 12: For VIN – VOUT = 1.5V; VIN = 5V, VOUT = 3.5V. VOUT = 1V for all other current limit tests. |
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