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RU30E60M2 Datasheet(PDF) 1 Page - Ruichips Semiconductor Co., Ltd |
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RU30E60M2 Datasheet(HTML) 1 Page - Ruichips Semiconductor Co., Ltd |
1 / 8 page RU30E60M2 N-Channel Advanced Power MOSFET Symbol Rating Unit VDSS 30 VGSS ±20 TJ 150 °C TSTG -55 to 150 °C IS TC=25°C 60 A IDP ① TC=25°C 240 A TC=25°C 60 TC=100°C 38 TA=25°C 21 TA=70°C 17 TC=25°C 43 TC=100°C 17 TA=25°C 3.5 TA=70°C 2.3 Ruichips Semiconductor Co., Ltd Rev. B– JAN., 2014 1 www.ruichips.com Pin Description Features Applications Absolute Maximum Ratings PDFN3333 N-Channel MOSFET Parameter Common Ratings (TC=25°C Unless Otherwise Noted) • 30V/60A, RDS (ON) =3mΩ(Typ.)@VGS=10V RDS (ON) =6mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Ulta Low On-Resistance • ESD Protected(Rating 4KV HBM) • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) • Switching Application Systems Drain-Source Voltage V Gate-Source Voltage Continuous Drain Current@TA(VGS=10V) ③ Maximum Power Dissipation@TC Maximum Power Dissipation@TA ③ Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current 300μs Pulse Drain Current Tested Mounted on Large Heat Sink ID ② A PD W Continuous Drain Current@TC(VGS=10V) S S S G D D D D PIN1 PIN1 G S D |
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