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RU5H13R Datasheet(PDF) 4 Page - Ruichips Semiconductor Co., Ltd

Part # RU5H13R
Description  N-Channel Advanced Power MOSFET
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Manufacturer  RUICHIPS [Ruichips Semiconductor Co., Ltd]
Direct Link  http://www.ruichips.com
Logo RUICHIPS - Ruichips Semiconductor Co., Ltd

RU5H13R Datasheet(HTML) 4 Page - Ruichips Semiconductor Co., Ltd

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℃
RU5H13R
Ruichips Semiconductor Co., Ltd
Rev. A– MAY., 2013
4
www.ruichips.com
Typical Characteristics
0
2
4
6
8
10
12
14
25
50
75
100
125
150
175
T
J - Junction Temperature (°C)
Drain Current
VGS=10V
0
200
400
600
800
1000
0
1
2
3
4
5
6
7
8
9
10
V
GS - Gate-Source Voltage (V)
Drain Current
Ids=13A
0
50
100
150
200
250
0
25
50
75
100
125
150
175
T
J - Junction Temperature (°C)
Power Dissipation
0.01
0.10
1.00
10.00
0.1
1
10
100
1000
V
DS - Drain-Source Voltage (V)
Safe Operation Area
10µs
100µs
1ms
10ms
DC
T
C=25°C
0.001
0.01
0.1
1
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Thermal Transient Impedance
Single Pulse
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
RθJC=0.6°C/W


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